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Bolo



Joined: 05 Dec 2017
Posts: 521
Location: 506F6C616E64

PostPosted: Thu Aug 05, 2021 14:36    Post subject: New Samsung NAND RR - R&D
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Hello,

Does anyone tried to crack RR for 19nm MLC (EC DE A4 32) /TLC Samsung (EC DE 98 DE) NAND (registers 0xa7 ...... 0xa6) ??

We do some research work (extracted commands, registers and valuses) but still can't force FE by Debug commands to accept the set value to relevant registers.

All solutions on the market (FE, VNR and PC3000) using this same RR configuration for Samsung NAND and this RR working only with old 32nm chips (base 9 registers in VNR and PC3000 form 0xB1 to 0x12) and extra 3 registers available in FE. Also configuration of RR of those TLC NAND is totaly diffrent.

If someone have knowledge about samsung read retry please, contact with us maybe together we will make it work.
Bolo



Joined: 05 Dec 2017
Posts: 521
Location: 506F6C616E64

PostPosted: Wed Aug 11, 2021 11:21    Post subject:
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MLC new RR register is cracked - instruction how to implement into FE sended over Skype

now working on TLC
jeremyb



Joined: 09 Dec 2008
Posts: 1746
Location: RecoverMyFlashDrive.com Bridgeport, CT, USA

PostPosted: Thu Aug 12, 2021 1:51    Post subject:
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Good Job Smile
Сергей



Joined: 26 Aug 2005
Posts: 19185

Flash-Extractor developer

PostPosted: Mon Aug 16, 2021 11:57    Post subject:
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Thanks, Bolo

From me, and all FE users

Samsung v3 RR added to FE_1027
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Last added
IT1178S3   45 de 94 93   1x1   Ref Monolith Micro SD_44   ec de 94 43   1x1   Ref Monolith USB_95   ec d5 14 b6   2x1 Monolith Micro SD_43   ec de 88 bf   2x8 Monolith USB_94   45 3a a4 93   1x1 TC58NC6136G6F   98 3c 98 b3   1x1 PS2251-08-Q   98 3e 99 b3   2x4 SM3280P AB   89 a4 08 32   2x4 UP10   ec d3 14 25   1x1 Monolith USB_93   98 3a a8 92   1x2
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