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Joined: 05 Dec 2017
Posts: 551
Location: 506F6C616E64

PostPosted: Thu Aug 05, 2021 14:36    Post subject: New Samsung NAND RR - R&D
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Does anyone tried to crack RR for 19nm MLC (EC DE A4 32) /TLC Samsung (EC DE 98 DE) NAND (registers 0xa7 ...... 0xa6) ??

We do some research work (extracted commands, registers and valuses) but still can't force FE by Debug commands to accept the set value to relevant registers.

All solutions on the market (FE, VNR and PC3000) using this same RR configuration for Samsung NAND and this RR working only with old 32nm chips (base 9 registers in VNR and PC3000 form 0xB1 to 0x12) and extra 3 registers available in FE. Also configuration of RR of those TLC NAND is totaly diffrent.

If someone have knowledge about samsung read retry please, contact with us maybe together we will make it work.

Joined: 05 Dec 2017
Posts: 551
Location: 506F6C616E64

PostPosted: Wed Aug 11, 2021 11:21    Post subject:
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MLC new RR register is cracked - instruction how to implement into FE sended over Skype

now working on TLC

Joined: 09 Dec 2008
Posts: 1801
Location: RecoverMyFlashDrive.com Bridgeport, CT, USA

PostPosted: Thu Aug 12, 2021 1:51    Post subject:
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Good Job Smile

Joined: 26 Aug 2005
Posts: 19462

Flash-Extractor developer

PostPosted: Mon Aug 16, 2021 11:57    Post subject:
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Thanks, Bolo

From me, and all FE users

Samsung v3 RR added to FE_1027
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